PART |
Description |
Maker |
WMS512K8L-25FQA WMS512K8-25FQA WMS512K8L-45DEC WMS |
512Kx8 MONOLITHIC SRAM, SMD 5962-95613
|
White Electronic Designs Co... White Electronic Design...
|
WMS512K8V-15FC WMS512K8V-15FI WMS512K8V-15FM WMS51 |
512Kx8 MONOLITHIC SRAM
|
White Electronic Design...
|
WS512K8-45CQ WS512K8-45CMA WS512K8-XCX WS512K8-25C |
From old datasheet system 512Kx8 SRAM MODULE / SMD 5962-92078 512Kx8 SRAM MODULE, SMD 5962-92078
|
List of Unclassifed Manufacturers ETC[ETC] White Electronic Designs
|
WMS256K16L-17DLMA WMS256K16-20DLC WMS256K16-20DLCA |
256Kx16 MONOLITHIC SRAM, SMD 5962-96902
|
WEDC[White Electronic Designs Corporation]
|
EDI88130CSXNB EDI88130CSXCB EDI88130CSXTM EDI88130 |
128Kx8 Monolithic SRAM, SMD 5962-89598
|
http:// White Electronic Design...
|
K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM 512K X 8 STANDARD SRAM, 70 ns, PDIP32 512K X 8 STANDARD SRAM, 55 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic http://
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KM684000B KM684000BL KM684000BLG-5 KM684000BLG-5L |
512K X 8 STANDARD SRAM, 70 ns, PDIP32 512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
CYM1464 CYM1464PD-22C CYM1464PD-30C CYM1464PD-45C |
512Kx8 Static RAM Module 512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, DMA32 512Kx8 Static RAM Module 512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, DMA32 512Kx8 Static RAM Module 512K X 8 MULTI DEVICE SRAM MODULE, 55 ns, DMA32
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
ACT-PS512K8W-012L2I ACT-PS512K8Y-017L2T ACT-PS512K |
High speed 4 Megabit plastic monolithic SRAM. Options burn-in. Speed 12ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 17ns. High speed 4 Megabit plastic monolithic SRAM. Options none. Speed 10ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle. Speed 15ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 25ns. High speed 4 Megabit plastic monolithic SRAM. Options temp cycle & burn-in. Speed 20ns.
|
Aeroflex Circuit Technology
|
KM23V4100D KM23V4100DG |
4M-Bit (512Kx8 /256Kx16) CMOS Mask ROM(4M(512Kx8 /256Kx16) CMOS掩膜ROM) 4分位512Kx8 / 256Kx16)的CMOS掩模ROM分位512Kx8 / 256Kx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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